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Large photosensitivity in extremely high index contrast SiON waveguides on Si

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Abstract

We demonstrate the photosensitivity of an extremely high index contrast silicon oxynitride waveguide using an arrayed-waveguide grating multi/demultiplexer. We observed a large index change for a 7.7%-Δ waveguide induced by ArF laser irradiation, which was up to 2.4 × 10−3 and stable for thermal annealing.

© 2010 Optical Society of America

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