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  • Bragg Gratings, Photosensitivity, and Poling in Glass Fibers and Waveguides: Applications and Fundamentals
  • Technical Digest Series (Optica Publishing Group, 1997),
  • paper JMA.8
  • https://doi.org/10.1364/BGPPF.1997.JMA.8

Vacancies in as-grown and electron irradiated α-SiO2

Open Access Open Access

Abstract

Positron annihilation is a technique uniquely suited to detect vacancies independent of whether they are EPR active or not. In α-SiO2 it has long been suspected that EPR inactive precursors should exist for the E’ centre. Here we show that vacancies are indeed present in as-grown α-SiO2 at a concentration of ~1017/cm3. About 1000 °C these vacancies migrate whereup they form vacancy clusters. 2 MeV electron irradiation introduces additional vacancies but at a highly nonlinear rate. The introduction rate decreases abruptly by a factor of 5 around a dose of 1017e/cm2. The irradiation-produced vacancies are annealed out at 500 °C well below that for the vacancies in the as-grown α-SiO2. We ascribe the 500 °C annealing stage to recombination with interstitials closely associated with the irradiation-produced vacancies.

© 1997 Optical Society of America

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