Abstract
There are a lot of structure defects known more or less in pure and doped silica[1]. They appear either in absorption or in fluorescence or also in EPR. In this paper, we are interested in the occurrence of 270 nm absorption and excitation band. This band was mentioned first in a paper in 1982[2]. In this paper, in synthetic GeO2-SiO2 glass containing 0.2 wt% of Ge, the authors have found 270 nm excitation band associated with 435 nm luminescence band. They note that Garrino-Canina[3] have seen a luminescence at 435 nm band but in a much less pure sample. They associate the GeO defect to this band. One year later, Gebala[4] has noticed a 270 nm excitation and 430 nm luminescence band in Ge-P-SiO2. He has associated this to Ge2+ in octahedral coordination.
© 1997 Optical Society of America
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