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Improved Opto-electronic Properties of Ultraviolet Laser Diodes by utilizing Step Graded Aluminium concentration in Quantum Barriers

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Abstract

The LD design with step graded aluminum concentration from the first quantum barrier (FQB) to the final quantum barrier (LQB) enhances the IQE by 33% and power from 3 mW to 12.2 mW in proposed LD.

© 2022 The Author(s)

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More Like This
Signal-to-idler Energy Conversion from 1.9 to 2.3 µm by Transient Stimulated Raman Chirped-Pulse Amplification

Paulius Mackonis, Augustinas Petrulenas, and Aleksej M. Rodin
JW3A.5 Advanced Solid State Lasers (ASSL) 2022

Improvement in optoelectronic properties of AlGaAs/InGaAs laser in near-infrared region

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