Investigation of carrier-induced bistability in SOI micro-ring resonators for memory applications

Andrey A. Nikitin; Ilya A. Ryabcev; Alexander A. Ershov; Alexander A. Semenov; Dmitry A. Konkin; Dmitry A. Konkin; Andrey A. Kokolov; Andrey A. Kokolov; Leonid I. Babak; Feodor I. Sheyerman; Alexey B. Ustinov

doi:10.1364/BGPPM.2022.JW3A.48

Optica Advanced Photonics Congress 2022
Technical Digest Series (Optica Publishing Group, 2022),
paper JW3A.48
•https://doi.org/10.1364/BGPPM.2022.JW3A.48

Investigation of carrier-induced bistability in SOI micro-ring resonators for memory applications

Andrey A. Nikitin, Ilya A. Ryabcev, Alexander A. Ershov, Alexander A. Semenov, Dmitry A. Konkin, Andrey A. Kokolov, Leonid I. Babak, Feodor I. Sheyerman, and Alexey B. Ustinov

Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials 2022

Maastricht,Limburg Netherlands
24–28 July 2022
ISBN: 978-1-957171-16-6

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A. A. Nikitin, I. A. Ryabcev, A. A. Ershov, A. A. Semenov, D. A. Konkin, A. A. Kokolov, L. I. Babak, F. I. Sheyerman, and A. B. Ustinov, "Investigation of carrier-induced bistability in SOI micro-ring resonators for memory applications," in Optica Advanced Photonics Congress 2022, Technical Digest Series (Optica Publishing Group, 2022), paper JW3A.48.

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Abstract

We report on the use of passive micro-ring resonator fabricated with silicon-on-insulator technology for memory applications. We show that the minimal pulse length ensuring the memory operation is limited by 260 ns.

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