Design and Characteristics of Optimized Quaternary Layer Between Last Quantum Barrier and Electron Blocking Layer in Deep Ultraviolet Light-Emitting Diode

Saad Rasheed; Muhammad Usman; Shazma Ali

doi:10.1364/ASSL.2022.JW3A.5

Optica Advanced Photonics Congress 2022
Technical Digest Series (Optica Publishing Group, 2022),
paper JW3A.5
•https://doi.org/10.1364/ASSL.2022.JW3A.5

Design and Characteristics of Optimized Quaternary Layer Between Last Quantum Barrier and Electron Blocking Layer in Deep Ultraviolet Light-Emitting Diode

Saad Rasheed, Muhammad Usman, and Shazma Ali

Bragg Gratings, Photosensitivity and Poling in Glass Waveguides and Materials 2022

Maastricht,Limburg Netherlands
24–28 July 2022
ISBN: 978-1-957171-16-6

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Poster Session II- Virtual (JW3A)

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S. Rasheed, M. Usman, and S. Ali, "Design and Characteristics of Optimized Quaternary Layer Between Last Quantum Barrier and Electron Blocking Layer in Deep Ultraviolet Light-Emitting Diode," in Optica Advanced Photonics Congress 2022, Technical Digest Series (Optica Publishing Group, 2022), paper JW3A.5.

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Abstract

In this research, we sandwich the aluminum indium gallium nitride (AlInGaN) layer between the final quantum barrier (LQB) and electron blocking layer (EBL) to increase the optoelectronic properties of AlGaN-based light-emitting diodes (LEDs).

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