Abstract

The wide energy gap II-VI compounds semiconductors, such as ZnSe, ZnS, MnSe, CdSe, and their ternary and quaternary alloys, are particularly suitable for the realization of short wavelength optoelectronic devices. These materials have been found to exhibit excellent luminescent properties as demonstrated by photoluminescent spectra [1] and the successful operation of photopumped lasers [2]. Recently, Haase et al[3] reported p-n heterojunction injection laser operating at cryogenic temperatures. Currently, several research groups are investigating p-type doping of ZnSe using MBE, MOCVD and CBE growth techniques. However, compensation at high nitrogen level (>10¹⁸ cm^-3) still remains a problem[4]. While the effort in optimizing p-n heterojunctions to obtain room temperature lasers is being pursued intensely, an alternate approach is the use of MIS structures to obtain injection luminescence[5,6]. This paper discusses modal analysis of p-n double heterojunction and MIS laser heterostructures. In particular, ZnSe-ZnSSe, ZnSe-ZnCdSe structures are analyzed. Numerical computations of field intensities, confinement factors r and the threshold current densities J_TH are presented. Experimental data of luminescence spectra in Au-SiO₂-ZnSe MIS devices is also presented.

© 1992 Optical Society of America