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Growth of ZnMgSSe and Fabrication of Blue Laser Diodes

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For decades, wide gap II-VI semiconductors have been intensively studied for application to visible light emitting devices. Recently some research groups have fabricated laser diodes that emit blue-green light from a ZnCdSe/ZnSSe single and multi quantum well active layer.1 However, emission of genuinely blue light can not be obtained from these type of structures. When we use Zn(S)Se as an active layer material, blue light can be obtained. But there have not been candidates for a cladding layer material, that is lattice-matched to the substrate and has sufficient band-gap energy. In this paper, we firstly propose a new material, ZnMgSSe. This material meets the requirements of the cladding layer of Zn(S)Se for fabricating a blue laser diodes. Secondly, we report the successful CW operation of ZnSe/ZnMgSSe multi quantum well and double-heterostructure blue lasers at 77K for the first time.

© 1993 Optical Society of America

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