Abstract

Significant progress toward the development of viable blue and green II-VI laser diodes (LDs) was made since the initial demonstration of these devices in our laboratory nearly 2 years ago [1]. Lasing was obtained in the pulsed mode at room temperature [2] with threshold current densities less than 1000 A/cm² and continuous wave devices have been operated at 80 K. It is also important to note that several other laboratories succeeded in confirming laser oscillation in related structures [4-10]. Some recent advances in II-VI laser diodes include the development of electrical contacts to p-type ZnSe with lower contact resistances, the growth of high quality lattice matched ternaries and the realization of increased efficiencies in Cd_XZn_1−XSe quantum wells grown by atomic layer epitaxy.

© 1993 Optical Society of America