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Low Threshold Quasi-Three-Level 946nm Laser Operation of an Epitaxially Grown Nd:YAG Waveguide

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Abstract

There has recently been much work on fabricating waveguide lasers based on crystal hosts by methods such as crystal fibre growth1, ion-exchange2, in-diffusion3, ion-implantation4, and epitaxial growth5. Despite the confinement of pump and signal beams to a few microns spot size, in general these lasers have not shown a clear advantage over bulk lasers in terms of thresholds due to propagation losses of the order of 0.1dB/cm or higher. Here we identify laser systems in which crystal waveguides will show great advantages over bulk lasers, namely 3 level and quasi-3 level transitions, and as an example describe the low threshold operation of a 946nm Nd:YAG epitaxial waveguide laser. The extra cavity loss arising from using a waveguide is less significant in (quasi-) three level systems as re-absorption loss from the lower laser level is present.

© 1993 Optical Society of America

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