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Longitudinal-mode control in GaAs lasers using a three-mirror active-passive cavity

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Abstract

Single-mode double-heterostructure GaAs lasers generally require either very narrow active regions or epitaxial growth on etched substrates. We show that by integrated optics techniques, using device fabrication applied to flat epilayers, we may introduce sufficient longitudinal-mode control to obtain single-mode operation. In addition, by choosing different geometries we may obtain two modes or one group of a few modes.

© 1981 Optical Society of America

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