Abstract
We present the results of a time-resolved Raman study of lattice temperature following excitation by an 8-nsec pulsed laser with energy densities in the 1-J/cm2 range. The results show that the lattice temperature always remains far below the melting point of crystalline silicon even though an enhanced reflectivity phase is observed.1 In addition, we describe time-resolved optical transmission experiments with silicon-on-sapphire (SOS) samples by means of which we have obtained the spectral dependence (from 1 to 3.3 eV) of the induced absorption during the high reflectivity phase.
© 1981 Optical Society of America
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