Abstract
The laser-enhanced chemical etching of Si and Ta with SF6, Si, SiO2, Ta, and Te films with XeF2 excited by a pulsed CO2 laser arid SiO2 with Cl2 by a cw Ar+ laser has been studied, and the etch rates as a function of the laser wavelength, laser intensity, and gas pressure have been determined.
© 1982 Optical Society of America
PDF ArticleMore Like This
Robert J. Von Gutfeld
WE1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1982
FAHFU HO, J. J. RITSKO, and G. KOREN
FQ4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1985
W. Sesselmann, E. Hudeczek, and F. Bachmann
WC9 Microphysics of Surfaces, Beams, and Adsorbates (MSBA) 1989