Abstract
A planar InP/In0.67Ga0.33As0.70P0.30/In0.53-Ga0.47As/InP-(111)A avalanche photodiode (APD) has been fabricated and tested for use in the optical transmission systems operating at 1.3-1.6 μm. The diode described here has been designed to show low multiplication noise, low dark current, and high-speed response by selecting a crystal orientation and by separating the multiplication region (InP) from the light absorption region (InGaAsP and InGaAs).1 Also an intermediate band gap InGaAsP layer was intentionally introduced to enhance the response speed. The cross-sectional view of the diode fabricated is shown in Fig. 1. Each n layer was grown on the (111)A-InP substrate by liquid phase epitaxy.
© 1983 Optical Society of America
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