Abstract

The general optical microscope and scan electron microscope (SEM) are effective tools for studying GaAlAs/GaAs DH lasers. With them one can observe the perfection of facets, homogeneity of epitaxial layers, device structure, near-field pattern, etc. However, it is very difficult to obtain with them such information as optical homogeneity of epitaxial layers, positions of spontaneous and/or stimulated emissions, and current expansion under a small dc. This information is very important for multilayer structure luminescent deviceflke laser diodes.

© 1983 Optical Society of America