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Conferences > CLEO > 1983 > WB > WB4

Stripe-geometry lead-telluride lasers grown by molecular beam epitaxy

D. L. Partin, R. F. Majkowski, and C. M. Thrush

Open Access Open Access

Abstract

Lead-telluride homojunction diode lasers suitable for ultrahigh-resolution spectroscopy have been fabricated using molecular beam epitaxial (MBE) growth and a mesa stripe geometry. A low MBE substrate growth temperature of 260°C was used to minimize interdiffusion during growth. These lasers operate cw up to 115 K with emission in the 6.5-5.0-μm wavelength range. The threshold current density follows the relation J- J0 exp( T/T0) up to 110 K with J0 = 110 A/cm2 and T0 = 26.0 K. Thermal resistance effects cause a departure from this relationship at higher temperatures.

© 1983 Optical Society of America

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