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Evaluation of InGaAsP laser material by optical pumping

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Abstract

A novel technique based on optical pumping has been developed to evaluate InGaAsP laser material before it is processed into electrical devices. By pumping unprocessed InGaAsP chips with cleaved mirrors with a 1.06-μm wavelength Nd:YAG laser and detecting the light emitted by the quaternary active layer, various properties such as laser threshold, wavelength, and differential quantum efficiency can be determined. This technique can provide a method for screening InGaAsP laser material prior to time-consuming processing. The technique is also applicable to partially processed laser chips, and hence the effect of each processing step can be evaluated. We find that threshold intensifies and T0 (~60°C), the parameter characterizing the temperature variation of threshold, are virtually the same for chips without and with a p-n junction or alloyed contact.

© 1983 Optical Society of America

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