Abstract
A novel technique based on optical pumping has been developed to evaluate InGaAsP laser material before it is processed into electrical devices. By pumping unprocessed InGaAsP chips with cleaved mirrors with a 1.06-μm wavelength Nd:YAG laser and detecting the light emitted by the quaternary active layer, various properties such as laser threshold, wavelength, and differential quantum efficiency can be determined. This technique can provide a method for screening InGaAsP laser material prior to time-consuming processing. The technique is also applicable to partially processed laser chips, and hence the effect of each processing step can be evaluated. We find that threshold intensifies and T0 (~60°C), the parameter characterizing the temperature variation of threshold, are virtually the same for chips without and with a p-n junction or alloyed contact.
© 1983 Optical Society of America
PDF ArticleMore Like This
J. P. Van Der Ziel, H. Temkin, and R. A. Logan
WG4 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983
Akira Fujimoto, Mikihiko Shimura, and SeIsuke Hinoda
WB3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983
M. A. Pollack
WG1 Conference on Lasers and Electro-Optics (CLEO:S&I) 1983