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Electroabsorption in GaAs/GaAlAs multiple quantum well structures

D. S. Chemla, T. C. Damen, D. A. B. Miller, A. G. Gossard, and W. Wiegmann

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Abstract

We report the first observations of the dependence of optical absorption on the electric field in GaAs/GaAlAs multiple quantum well structures. For wavelengths near the band gap (~850 nm), large effects are seen with fields of 2 × 104 V/cm due to the shift and broadening of room temperature exciton resonances; consequently this material is very attractive as a light modulator which will require only a few microns of optical path. Because of the small volume of such a modulator, it is especially attractive for high-speed applications.

© 1983 Optical Society of America

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