Abstract

Doping of semiconductors from a gas atmosphere is a technique which is well established in device technology. However, little has been reported about short-time laser-induced diffusion,^1,2 which promises some advantages compared to conventional methods. Only the irradiated areas are doped. Using pulsed lasers, these areas are heated for a short time in which diffusion can take place. Due to rapid cooling, very high nonequilibrium concentrations of dopants can be incorporated as active donors or acceptors in a thin layer.

© 1984 Optical Society of America