Abstract

One pumping method to obtain lasing in semiconductors focuses an accelerated beam of electrons on the target semiconductor to generate high-density free electron-hole pairs. This method is especially useful where a scan-addressable array of lasers is desired and where injection lasing in a semiconductor is not possible due to difficulties In forming a reliable junction. ZnSe is a II-VI compound semiconductor material in which Junction formation has been difficult. Data on an e-beam- pumped room-temperature ZnSe laser were reported by Bulakh¹ et al, where the threshold power densities are several times higher than those observed in our experiments. A similar conclusion was reached upon examination of the room-temperature II-VI laser operation reviewed by Basov.²

© 1984 Optical Society of America