Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Reflective optical bistability at 3 mW in InAs

Not Accessible

Your library or personal account may give you access

Abstract

Optical bistability using the large nonlinear index at the band gap of semiconductors has been demonstrated in InSb and GaAs.1,2 We present here bistability in InAs at a wavelength of 3μm, which lies between that of the other reported semiconductors. The 3-μm line of the HF laser was used which closely matches the band gap at 77 K. We also will report on experiments in progress to observe bistability at room temperature with the DF laser.

© 1984 Optical Society of America

PDF Article
More Like This
Nonlinear Refraction at the Band Gap in InAs

C. D. Poole and E. Garmire
TuEE1 International Quantum Electronics Conference (IQEC) 1984

Room-temperature excitonic optical bistability in bulk GaAs

J. L. Jewell, S. Ovadia, N. Peyghambarian, S. S. Tarng, Hyatt M. Gibbs, A. C. Gossard, and W. Wiegmann
WO2 Conference on Lasers and Electro-Optics (CLEO) 1984

References

You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an Optica member, or as an authorized user of your institution.

Contact your librarian or system administrator
or
Login to access Optica Member Subscription

Select as filters


Select Topics Cancel
© Copyright 2022 | Optica Publishing Group. All Rights Reserved