Abstract
Defect repair of Cr photomasks has recently become an indispensable method for reducing the production cost of VLSI components. However, a quick and accurate repair technique tor pinhole type defects has not yet been established primarily because the deposit which is used for covering the defect must simultaneously satisfy the following severe requirements: size of several micrometers with sharp edge pattern definition submicrometer thickness, sufficient optical extinction, strong adhesion, and durability against cleaning processes.
© 1985 Optical Society of America
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