Abstract

Femtosecond optical pulses are a valuable tool in elucidating the ultrafast transfer of light pulse energy to a crystalline lattice, such as in pulsed laser annealing of semiconductors. Previous femtosecond experiments on silicon have measured the changes in reflectivity at the surface of an optically thick sample.1,2 In the present experiment, we obtain complete time-resolved information on the optical constants of silicon by measuring absorption in an optically thin layer of silicon. The optical absorption between the indirect and direct band gaps is a valuable monitor of the speed and magnitude of lattice temperature rise,3 since this absorption depends strongly on lattice temperature.4 In addition, we can determine for the first time the relative importance of nonlinear and linear absorption in femtosecond laser excitation of silicon.

© 1985 Optical Society of America

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References

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