Abstract
GaAs multiple quantum well (MQW) structures are already exceptional because they show exciton absorption resonances without cooling. MQW structures have also recently shown a phenomenon (also at room temperature) which is qualitatively distinct from that seen with bulk semiconductors at any temperature; for applied electric fields perpendicular to the layers, the exciton resonances are shifted by large amounts without large broadening (Fig. 1).
© 1985 Optical Society of America
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