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Conferences > CLEO > 1986 > FO > FO2

Devices for control of light amplification

Akio Sasaki, Shigeo Fujita, and Yoshikazu Takeda

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Abstract

Semiconductor devices for light amplification in that 1-μm wavelength region have already been proposed,1,2 such as the direct and vertical integration devices, e.g., a double heterojunction light-emitting diode integrated onto the collector portion of a heterojunction phototransistor, as shown in Fig. 1, or vice versa. It was experimentally observed that the input light intensity is amplified and the maximum gain is ~10.

© 1986 Optical Society of America

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