Abstract
Precise knowledge of the carrier, density and light intensity dependence of gain in a semiconductor laser is needed to determine the AM and FM responses of these devices. In particular, nonlinear gain effects are responsible for rapid damping of relaxation oscillations and for the flat FM response between the thermal FM cutoff and relaxation oscillation frequencies. Some effects which lead to intensity-dependent gain are spectral hole burning, nonlinear absorption, spatial hole burning,1 as well as intensity-dependent heating of the electron-hole gas.2
© 1986 Optical Society of America
PDF ArticleMore Like This
Michael S. Stix, Morris P. Kesler, Erich P. Ippen, and Peter S. Cross
THH5 Conference on Lasers and Electro-Optics (CLEO:S&I) 1986
Yu. D. Kalafati and V. A. Kokin
PTh080 International Quantum Electronics Conference (IQEC) 1992
Yu. D. Kalafati and V. A. Kokin
QThD15 Quantum Electronics and Laser Science Conference (CLEO:FS) 1992