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Optical emission at 1.32 μm from sulfur-doped crystalline silicon

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Abstract

The early research in optical fiber communications focused attention on the 0.8-0.9-μm wavelength interval and the GaAIAs family of light-emitting diodes and semiconductor lasers. More recent developments, however, have shifted the emphasis to longer wavelengths and light sources based in other direct band gap semiconductor systems. Silicon is transparent at these longer wavelengths (λ ≥ 1.12 μm at T = 300 K), but its indirect band gap precludes efficient band-to-band recombination. There remain, however, other types of transition in silicon that are of interest, as evidenced by the recent reports of efficient room-temperature photoluminescence (PL) in hydrogenated amorphous silicon1 and of electroluminescence from erbium-doped crystalline silicon.2

© 1986 Optical Society of America

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