Abstract
The reduction of the parasitic capacitance of the semiconductor lasers is an important factor for high-bit-rate modulation. The buried heterostructure (BH) is widely used because of its low threshold and fundamental transverse mode lasing. The C-V measurement at 13 MHz shows a high parasitic capacitance of ~ 100 pF, giving the 3-dB down bandwidth of some hundreds of megahertz. However, the frequency response measurements of practical BH lasers show a wider gigahertz bandwidth, We analyze the parasitic capacitance using the distributed capacitance model and obtain good coincidence with experimental results from the low to the high frequency regions.
© 1986 Optical Society of America
PDF ArticleMore Like This
C. B. Su and R. Olshansky
WBB1 Integrated and Guided Wave Optics (IGWO) 1986
C. B. SU and R. OLSHANSKY
WBB1 Optical Fiber Communication Conference (OFC) 1986
Hajime Imai
TuD1 Semiconductor Lasers (ASLA) 1987