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Silicon nitride films by laser-induced chemical vapor deposition

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Abstract

The laser-induced chemical vapor deposition (LICVD) technique produces high-quality amorphous silicon films at low deposition temperatures,1,2 and until recently very little work had been done on silicon nitride thin films for wear/corrosion-resistance. We here describe an effect on laser wavelength and characteristics of LICVD silicon nitride films by using ammonia with monosilane or disilane gas.

© 1986 Optical Society of America

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