Abstract

Laser excitation and photolysis of unreactive parent gases can produce fragments that strongly Interact with silicon.¹ Gaseous NF₃ represents an excellent example. Infrared multiple-photon dissociation (IRMPD) of NF₃ using pulsed CO₂ laser radiation produces fluorine radicals that chemically react with silicon. As a result, volatile etch products are produced removing silicon from the surface. This gas-solid system provides important information concerning the heterogeneous FSi surface reaction yield and mechanism. Furthermore, insight into more complicated etching systems (i.e., plasma) can be gained.

© 1986 Optical Society of America