Abstract

A high-power laser emisson of more than 10 mW is required as the light source for laser printers, optical recording systems, and so on. Here we report on a visible gain-guided AIGaAs laser grown by metal-organic chemical vapor deposition (MOCVD) with a tapered stripe (TAPS) geometry, as shown in Fig. 1,¹ which has been operated up to 60 mW (cw) and 100 mW (pulsed), in the fundamental transverse mode. Since the thickness of the active layer has been designed to be <500 Å, single-lobed far-field patterns parallel to the Junction have been realized, keeping the lasing spectra multimode by means of an antireflective coating on the front facet and a reflective coating on the rear facet. These characteristics are desirable for obtaining good coupling efficiency with the optical lens and a stable SNR even in the presence of optical feedback or changes in temperature.

© 1986 Optical Society of America