Abstract
We describe the modulation and spectral properties of semi-insulating blocked planar buried heterostructure-distributed feedback (SIPBH-DFB) lasers.1 The SIPBH-DFB laser structure, shown schematically in Fig. 1, is grown in three epitaxial growth steps. The base double-heterostructure wafer is grown by liquid-phase epitaxy (LPE). Following the fabrication of first-order gratings, the mesas are etched and the SI-InP blocking layers are regrown by MOCVD,1 The p-InP cladding and p-InGaAs cap layers are also grown by MOCVD in the final growth step.
© 1988 Optical Society of America
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