Abstract
Understanding the nature of contaminants in photochemically deposited metallic films is of great importance to the implementation of this technology to microelectronic devices, since the properties of the films can be altered significantly by the presence of trace amounts of impurities. In the case of refractory metal films, detailed studies toward this end have been carried out by Gluck and co-workers with the metal hexacarbonyls.1
© 1988 Optical Society of America
PDF ArticleMore Like This
S. A. Mulenko
CThK45 Conference on Lasers and Electro-Optics (CLEO:S&I) 1996
H. H. BURKE, I. P. HERMAN, S. A. PIETTE, V. TAVITIAN, and J. GARY EDEN
WR2 Conference on Lasers and Electro-Optics (CLEO:S&I) 1988
F. S. Zhang, R. H. Wang, H. Angus Macleod, Robert E. Parks, and Michael R. Jacobson
THH5 OSA Annual Meeting (FIO) 1987