Abstract

Laser beam-induced current (LBIC) imaging has been used to obtain spatial maps of electrically active defects in HgCdTe and also to study p-n junction IR detector arrays of HgCdTe without making contacts to individual detector elements.¹ The LBIC signal is produced by raster scanning a focused laser spot over the surface of the sample and measuring the differential current created in the semiconductor as a function of position. The differential current is caused by the redistribution of charge in a region where the potential difference is larger than kT/q, resulting in the separation of photon-induced electron-hole pairs. The resultant image produced by these measurements provides a spatial image of electrically active regions in the semiconductor.

© 1988 Optical Society of America