Abstract
Several novel effects are demonstrated which are suitable for an optoelectronic device design based on the transport properties of semiconductor carriers generated under the influence of optically induced spatial modulation as illustrated in Fig. 1. The resulting transient photocurrents are studied under varied degrees of optical interference in specially prepared materials and are compared to the results obtained with high-speed photoconductive devices and high-speed photoconductive sampling structures. Because of the instantaneous response of optical fields and other characteristics particular to the conditions of dynamically interfering light, device properties are shown to be particularly interesting and useful for the processing of optical signals with picosecond and femtosecond features, as illustrated in Fig. 2.
© 1988 Optical Society of America
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