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Because of its unique electrical and thermal properties, diamond is a very interesting material for photoconductive switching. Previous studies1,2 showed that it is capable of fast response and high switching efficiency when irradiated with UV laser pulses. The third harmonic of a Nd laser at 355 nm and a KrCI laser at 206 nm were used for switching. We report the observation of the nonlinear dependence of mobility and carrier lifetime on high bias fields (up to 1 MV/cm); a KrF laser at 248.6 nm and a N2 laser at 337 nm were used.
© 1988 Optical Society of America
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