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Conferences > CLEO > 1988 > TUV > TUV2
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper TUV2

InP/InGaAsP 5-Gbit/s 1.5-μm OEIC transmitter grown by MO chemical vapor deposition

N. SUZUKI, H. FURUYAMA, Y. HIRAYAMA, M. MORINAGA, K. EGUCHI, M. KUSHIBE, M. FUNAMIZU, and M. NAKAMURA

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Abstract

Optoelectronic integrated circuits (OEICs) become advantageous compared with OE hybrid integration once the transmission rate exceeds 6.4 Gbit/s.1 In conventional OEICs, however, a laser diode (LD) is selectively grown by LPE in a deep groove to perform fine patterning of the electronic devices on the highest part of the substrate. Such a complicated process usually increases parasitics and limits the operating speed to 2-Gbit/s (RZ).2

© 1988 Optical Society of America

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