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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper TUX3

High-accuracy high-efficiency phase conjugation at 1.06 μm by four-wave mixing in photorefractive GaAs

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Abstract

The near-IR sensitivity and fast response of bulk photorefractive GaAs have recently made this compound semiconductor an attractive material for potential near-IR optical processing applications. A fundamental problem with GaAs is its small electrooptic coefficient, which results in low two-beam coupling gains and diffraction efficiencies.

© 1988 Optical Society of America

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