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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1988),
  • paper WX3

Laser-induced etching of silicon at 248 nm by F2/Ne

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Abstract

Laser-induced chemistry is a widely used technique for studying reactions between atoms and molecules. Recently, the use of lasers to initiate, control, or enhance gas-phase etch reactions at solid surfaces has shown promise as a method for providing highly selective etching and as a technique for producing atomically clean surfaces. The present work concerns the investigation, characterization, and development of laser-induced pattern etching of silicon, silicon dioxide, and silicon nitride, three important materials used in the semiconductor industry.

© 1988 Optical Society of America

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