High speed distributed feedback lasers with a semi-insulating blocking layer entirely grown by metal-organic vapor phase epitaxy

H. HORIKAWA; H. WADA; Y. MATSUI; K. YAMADA; Y. OGAWA; Y. KAWAI

Conference on Lasers and Electro-Optics
OSA Technical Digest (Optica Publishing Group, 1989),
paper THK28

High speed distributed feedback lasers with a semi-insulating blocking layer entirely grown by metal-organic vapor phase epitaxy

H. HORIKAWA, H. WADA, Y. MATSUI, K. YAMADA, Y. OGAWA, and Y. KAWAI

Conference on Lasers and Electro-Optics 1989

Baltimore, Maryland United States
24–28 April 1989
ISBN: 1-55752-086-0

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Poster Session: 3 (THK)

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H. HORIKAWA, H. WADA, Y. MATSUI, K. YAMADA, Y. OGAWA, and Y. KAWAI, "High speed distributed feedback lasers with a semi-insulating blocking layer entirely grown by metal-organic vapor phase epitaxy," in Conference on Lasers and Electro-Optics, R. Bartolini, P. Liao, J. Bufton, and W. Krupke, eds., Vol. 11 of OSA Technical Digest (Optica Publishing Group, 1989), paper THK28.

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Abstract

Distributed feedback (DFB) lasers with a semi-insulating (SI) current blocking layer^1,2 are expected to have excellent modulation characteristics, since SI layers with high resistivity offer low parasitic capacitance. Furthermore, SI layers have the potential for achieving integrated circuits. We have obtained highly resistive SI layers (5 × 10⁸ Ω cm) by doping with Fe using low pressure metal-organic vapor phase epitaxy (MOVPE).

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