Abstract
We have reported some room temperature cw characteristics of GaAs vertical cavity SE lasers grown by MOCVD.1,2 When we consider various uses, such as large capacity lightwave systems, laser disk memories, and optical interconnections in LSIs, the noise performance should be clarified. But such work has not yet been done due to limited cw experiments. We describe experimental studies and a theoretical estimate of the noise characteristics of GaAs/ GaAlAs SE lasers. First, we measured the relative intensity noise and analyzed it in terms of polarization. Then the cw spectral linewidth was measured using a delayed self-homodyned method.
© 1990 Optical Society of America
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