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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTHE5

Properties of multiple quantum well lasers with integrated optical amplifiers

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Abstract

Lasers and optical amplifiers can be easily integrated on the same semiconductor chip since the same active region layers can be used for both devices. Previously, we demonstrated a wavelength division multiplexing photonic integrated circuit (PIC) composed of three multiple quantum well (MQW) distributed Bragg reflector (DBR) lasers and an optical amplifier.1 We describe the characteristics of a single 1.5m wavelength DBR (or DFB) laser with its output power being fed through a straight passive waveguide into an optical amplifier. As quantum well (QW) optical amplifiers can have saturation output powers as high as 45 mW,2 it is possible to use these integrated devices at large output powers. Also, when rf modulation is applied to the laser, a large modulation response (in mW/mA) should be possible after amplification at the output.

© 1990 Optical Society of America

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