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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTHI12

Fabrication and performance characteristics of 1.3-μm DFB lasers with coplanar contacts

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Abstract

The coplanar contact distributed feedback (DFB) etched mesa buried heterostructure (EMBH) laser emitting at 1.3 μm was fabricated to enable both p and n contacts on the same plane. The inherent advantages of coplanar lasers offer great potential for the realization of optoelectronic integrated circuits (OEICs). This contact configuration on the semi-insulating current confining layer is easily integrated horizontally with FETs, drivers, etc. Figure 1 shows the coplanar contact structure. Standard double heterostructures were grown on (100) oriented n-InP substrates by MOVPE with first-order gratings. A nonselective Br/MeOH etch at −40°C was used to etch 4-μm high mesas with 1.5-μm active regions through a 4-μm wide SiO2 mask.1 The current confining layer was a Fe doped semi-insulating InP grown by hydride VPE.2 The surface N-contact channel was etched down to the substrate, ~100 μm wide and 70 μm from the active region; 25- μm AuBe P-contacts were deposited and alloyed. The wafer was thinned, and a broad area AuGe N-contact was deposited. The surface N-contact was patterned and AuGe deposited in a similar fashion in the 100-μm channel. The coplanar devices were cleaved into 250-μm cavity length devices. Electrical and optical performances of these devices were compared by applying currents to either the coplanar or conventional contacts. There was almost no difference in the series resistance measured for either contacting scheme. The lasing characteristics show little difference as shown in Fig. 2. The minimum threshold current was 14 mA, and the light output power reached 20 mW below 150 mA without coating. The laser was mounted in a high speed test fixture. The rf and dc signals were combined in a bias tee. The response was detected using a high speed InGaAsP photodetector3 with a bandwidth of 18 GHz. Side-mode suppression ratios >30 dB were observed. The maximum 3-dB bandwidth was 9.4 GHz as a coplanar device (Fig. 3). This compares directly with the bandwidth of the conventional contact devices.

© 1990 Optical Society of America

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