Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTHJ5

InGaAs/GaAs strained-layer quantum well heterostroctore phase-locked arrays operating in the in-phase fundamental array mode

Not Accessible

Your library or personal account may give you access

Abstract

Most work to date on semiconductor laser arrays for high power operation has focused on the evanescent coupling of closely spaced positive index waveguide elements, where the optical field is mostly confined to the regions of the individual elements either by gain-guiding or a real index step. To achieve phase-locked operation in the fundamental inphase supermode, arrays of closely spaced index depressions (antiguides) have been studied in the AlGaAs/GaAs materials system.1

© 1990 Optical Society of America

PDF Article
More Like This
InGaAs-GaAs strained layer quantum well heterostructure lasers

J. J. COLEMAN
WJ1 Optical Fiber Communication Conference (OFC) 1990

InGaAs/GaAs strained layer quantum well heterostructure lasers and laser arrays by metalorganic chemical vapor deposition

P. K. YORK, K. J. BEERNINK, G. E. FERNANDEZ, and J. J. COLEMAN
THM3 Conference on Lasers and Electro-Optics (CLEO:S&I) 1989

Comparison of threshold current and microwave modulation of GaAs-AlGaAs and strained layer InGaAs-GaAs-AlGaAs single quantum well lasers

S. D. OFFSEY, W. J. SCHAFF, P. J. TASKER, and L. F. EASTMAN
FE5 Optical Fiber Communication Conference (OFC) 1990

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved