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Conferences > CLEO > 1990 > CTUC > CTUC8
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CTUC8

Carrier lifetime reduction in GalnAs/InP multiple quantum well mesa stractures

M. LYNCH, J. HEGARTY, A. GINTY, W. M. KELLY, and W. T. TSANG

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Abstract

To develop fast nonlinear devices using saturable excitonic absorption in multiple quantum wells (MQWs) it is crucial to be able to reduce absorption recovery time. The absorption saturation is caused by screening by free carriers so the recovery time is determined by the carrier lifetime, which is in the region of 30 ns. In GaAs/ GaAlAs MQWs proton bombardment has reduced the recovery time to 150 ps,1 but further reduction is not possible without adversely affecting the optical properties.

© 1990 Optical Society of America

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