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Conferences > CLEO > 1990 > CWF > CWF59
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1990),
  • paper CWF59

Low contact resistance formation between laser written Mo and underlayered A1 interconnection

TAKASHI KAMIMURA, MIKIO KONGO, KATSKRO MIZUKOSHI, SHUZO SANO, and FUMIKAZU ITOH

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Abstract

Due to advances in size and density of LSIs, it has become difficult to develop LSIs in a short time. To solve this problem, it is effective to carry out failure analysis or repair quickly, and direct writing of conductors by laser-induced chemical vapor deposition (LCVD) is useful for these purposes.1,2 We propose advanced processes to reduce the contact resistance between Mo conductors formed by LCVD and underlayered A1 interconnection via holes in LSIs.

© 1990 Optical Society of America

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