Abstract

Laser photochemical deposition has received considerable attention as a technique for low temperature selective area deposition of semiconductors.^1,2 In particular, recent interest has been focused on the deposition of III-V compounds such as GaAs.^3-5 Low temperature selective deposition of these compounds is of specific application in optoelectronic device technology. However, studies have revealed that low temperature growth is often associated with poor quality morphology and carbon incorporation.

© 1990 Optical Society of America