Abstract
Z-cut LiNbO3 substrates were doped near the surface by indiffusion of a 10-7-nm-thick evaporated erbium layer at 1060 °C during 80 h. Using diffusion coefficients of erbium in LiNbO3 as published by Buchal et al.,1 a depth of the dopant concentration profile of about 5 µm has been calculated.
© 1991 Optical Society of America
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