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  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CThP4

Erbium-doped LiNbO3 waveguide-laser

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Abstract

Z-cut LiNbO3 substrates were doped near the surface by indiffusion of a 10-7-nm-thick evaporated erbium layer at 1060 °C during 80 h. Using diffusion coefficients of erbium in LiNbO3 as published by Buchal et al.,1 a 1e-penetration depth of the dopant concentration profile of about 5 µm has been calculated.

© 1991 Optical Society of America

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