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Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CThR34

High-speed GaInAs P-I-N photodiode with introduced layers to reduce series resistance fabricated by metal-organic vapor-phase epitaxy

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Abstract

High-speed positive-intrinsic-negative (P-I-N) photodiodes (PDs) are required for the development of optical communication and optical measurement for both optical waveform monitors and heterodyne detection at wavelengths of ~1.3-1.55 μm. The bandwidth of their optical response is primarily limited by resistance capacitance (RC) time constant and carrier transit time,1 where the capacitance is proportional to the junction area and increases as the intrinsic layer thickness decreases. On the other hand, the thinner the layer, the shorter the transit time. Consequently, to achieve a wide bandwidth, the small junction area is required to decrease the capacitance. The series resistance of the PD then increases as the electrode area decreases because of the small junction area, resulting in the large RC time constant.

© 1991 Optical Society of America

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