Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
  • Conference on Lasers and Electro-Optics
  • OSA Technical Digest (Optica Publishing Group, 1991),
  • paper CTuG4

Femtosecond carrier dynamics in low-temperature-MBE-grown GaAs

Not Accessible

Your library or personal account may give you access

Abstract

When GaAs is grown by MBE at low temperature (i.e., in the vicinity of 200°C) and subsequently annealed at about 600°C, the carrier lifetime as determined by photoconductivity and photoreflectance is dramatically reduced,1 an effect generally attributed to the excess arsenic that is incorporated into the material under low-temperature (LT) growth conditions.2,3 We have performed transient absorption spectroscopy of the band–edge region of LT GaAs to determine directly the carrier dynamics.

© 1991 Optical Society of America

PDF Article
More Like This
Transient Absorption of Low-Temperature-MBE-Grown GaAs

T.B. Norris, W. Sha, WJ. Schaff, and X.J. Song
FC4 Picosecond Electronics and Optoelectronics (UEO) 1991

Trapping and recombination dynamics in low temperature grown GaAs

A. I. Lobad and P. M. Fauchet
QTuE22 Quantum Electronics and Laser Science Conference (CLEO:FS) 1997

Femtosecond carrier dynamics of low-temperature-grown GaAs observed via Terahertz spectroscopy

S. S. Prabhu, S. E. Ralph, M. R. Melloch, and E. S. Harmon
UG9 Ultrafast Electronics and Optoelectronics (UEO) 1997

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved